PART |
Description |
Maker |
IXFN100N10S1 IXFN100N10S3 |
100V HiPerFET power MOSFET with schottky diodes
|
IXYS
|
IXFN72N55Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS From old datasheet system HiPerFET Power MOSFET 72 A, 550 V, 0.072 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS[IXYS Corporation] IXYS, Corp.
|
IXFT32N50 IXFH32N50 IXFH30N50 IXFT30N50 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.16惟??娌??澧?己??iPerFET???MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
IXFR80N15Q |
HiPerFET Power MOSFETs ISOPLUS247 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电2.5mΩ的N沟道增强型HiPerFET功率MOSFET)
|
IXYS Corporation
|
IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRFD120 |
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.27ohm,身份证\u003d 1.3a标准 Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation] ETC[ETC]
|
IRF9510S IRF9510STRL IRF9510STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A) Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A) Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)
|
IRF[International Rectifier]
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
IXFT66N20Q IXFH66N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation] IXYS, Corp.
|
IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A) Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
IRF[International Rectifier]
|
|